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Applied Physics Letters

Volumn 75, Issue 24, 1999, Pages 3790-3792

Crystallographic study of electromigration failure sites in submicron Al(Cu) interconnects

(4) Chu, X a,b Prybyla, J A a Theiss, S K a,c Marcus, M A a,d

a LUCENT TECHNOLOGIES (United States)

b CARNEGIE MELLON UNIVERSITY (United States)

c LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

d KLA TENCOR CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009190275 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.125457 Document Type: Article

Times cited : (6)

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- note
- A pure random orientation distribution would have a uniform value of 1 at all points. A value greater than 1 at any point means higher concentration of grain orientation along that direction. The higher the value, the more grains are oriented that way.

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- Ph.D. dissertation. Dept. of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, PA
- X. Chu, Ph.D. dissertation. Dept. of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, 1999.
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