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Volumn 75, Issue 9, 1999, Pages 1234-1236

A regime of the yield point of silicon at high temperatures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001211287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124652     Document Type: Article
Times cited : (17)

References (20)
  • 3
    • 0011470173 scopus 로고    scopus 로고
    • edited by W. Schröter and K. Jackson Wiley-VCH, Weinheim, in press
    • J. Möller, in Handbook of Semiconductor Technology, edited by W. Schröter and K. Jackson (Wiley-VCH, Weinheim, 1999) (in press).
    • (1999) Handbook of Semiconductor Technology
    • Möller, J.1
  • 5
    • 85034150285 scopus 로고
    • me Cyle, L'Institut National Polytechnique de Lorraine, Nancy
    • me Cyle, L'Institut National Polytechnique de Lorraine, Nancy, 1981.
    • (1981)
    • Omri, M.1
  • 15
    • 0000541543 scopus 로고
    • edited by F. R. N. Nabarro North-Holland, Amsterdam
    • H. Alexander, in Dislocations in Solids, edited by F. R. N. Nabarro (North-Holland, Amsterdam, 1986), Vol. 7, p. 113.
    • (1986) Dislocations in Solids , vol.7 , pp. 113
    • Alexander, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.