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Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 4885-4890

Yield point of as-grown and predeformed GaAs:Zn

(2) Brion, Hans Georg a Siethoff, Hans b

a UNIVERSITY OF GÖTTINGEN (Germany)

b UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000483108 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.368732 Document Type: Article

Times cited : (6)

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