Modelling microdefect distribution in dislocation-free Si crystals grown from the melt

Journal of Crystal Growth

Volumn 178, Issue 4, 1997, Pages 468-478

  Puzanov, Nikolai I ^a   Eidenzon, Anna M ^a   Puzanov, Dmitrii N ^a  

^a Scientific and Technological Centre   (Russian Federation)

Author keywords

Crystal; Intrinsic point defects; Microdefect; Silicon; Simulation

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; COOLING; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; INTERFACES (MATERIALS); POINT DEFECTS; TEMPERATURE DISTRIBUTION;

MICRODEFECTS; VORONKOV THEORY;

SILICON;

EID: 0031177177     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00006-7     Document Type: Article

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