Analytical approximations for the distributions of intrinsic point defects in grown silicon crystals

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 2, 1999, Pages 843-865

  Lemke, H ^a   Sudkamp W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL GROWTH; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POINT DEFECTS; THERMAL DIFFUSION IN SOLIDS; TRANSPORT PROPERTIES;

MELT/SOLID INTERFACES; SELF-INTERSTITIALS; VACANCY-DOMINATED REGIONS;

SILICON;

EID: 18244412406     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199912)176:2<843::AID-PSSA843>3.0.CO;2-8     Document Type: Article

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