Prediction of MEEF using a simple model and MEEF enhancement parameters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue , 2001, Pages 94-100

  Chung, D H ^a   Yang, S H ^a   Kim, H D ^a   Shin, I G ^a   Kim, Y H ^a   Choi, S W ^a   Han, W S ^a   Sohn, J M ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Diffusion parameter; DOF (depth of focus); Exposure latitude; MEEK (mask error enhancement factor); Photolithography; Resist blur

Indexed keywords

AMPLIFICATION; COMPUTER AIDED SOFTWARE ENGINEERING; COMPUTER SIMULATION; DIFFUSION; EXCIMER LASERS; HARMONIC GENERATION; PHOTOLITHOGRAPHY; PHOTORESISTS;

DEPTH OF FOCUS; DIFFUSION PARAMETER; EXPOSURE LATITUDE; IMAGE TRANSFERRING; MASK ERROR ENHANCEMENT FACTOR; RESIST BLUR;

MASKS;

EID: 0035189677     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.438343     Document Type: Conference Paper

References (9)

1. More on the mask error enhancement factor
2. New process monitor for reticles and wafers: The MEEF meter
3. Mask specifications for 193nm lithography
4. The mask error enhancement factor
5. Novel methodology for 130nm DRAM cell mask size optimization
6. Level-specific strategy of KrF microlithography for 130 nm DRAMs
7. 130-nm KrF lithography for DRAM production with 0.68-NA scanner
8. Mask error factor impact on the 130 nm node
9. Mask error factor: Causes and implications for process latitude