Single event upset characterization of the Pentium® MMX and Low Power Pentium® MMX microprocessors using proton irradiation

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2001, Pages 32-37

  Hiemstra, D M ^a   Yu, S ^a   Pop, M ^a  

^a MD Robotics   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVY IONS; PROTON IRRADIATION; RADIATION; TRANSISTORS;

SINGLE EVENT UPSET (SEU) CHARACTERIZATION;

MICROPROCESSOR CHIPS;

EID: 0035161955     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

1. The SEU figure of merit and proton upset rate calculations
2. Single event upset characterization of the Pentium® MMX and Pentium® II microprocessors using proton irradiation
3. Single event upset characterization of the Pentium® MMX and Celeron® microprocessors using proton irradiation
4. Latchup in integrated circuits from energetic protons
5. Risk assessment for heavy ions of parts tested with protons
6. SEU induced errors observed in microprocessor systems
7. Internuclear cascade-evaporation model for LET spectra of 200 MeV protons used for parts testing
8. The influence of VLSI technology evolution on radiation-induced latchup in space systems
9. Single-Event-Effect mitigation from a system perspective