Growth of InN by chloride-transport vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 PART A, 1996, Pages

  Sunakawa, Haruo ^a   Yamaguchi, A Atsushi ^a   Kimura, Akitaka ^a   Usui, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

GaAs; GaN; Hexagonal; Indium chloride; InN; Vapor phase epitaxy; X ray diffraction

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; FILM GROWTH; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; INDIUM CHLORIDE; INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030291222     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1395     Document Type: Article

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