Mercury cadmium telluride photodiodes at the beginning of the next millennium

Defence Science Journal

Volumn 51, Issue 1, 2001, Pages 5-34

  Rogalski, Antoni ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INFRARED DETECTORS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING CADMIUM TELLURIDE; TERNARY SYSTEMS;

HOMOJUNCTIONS;

PHOTODIODES;

EID: 0035120063     PISSN: 0011748X     EISSN: None     Source Type: Journal    
DOI: 10.14429/dsj.51.2202     Document Type: Article

References (62)

1. Norton, P.R.. Infrared detectors in the next millennium. Proceedings. SPIE, 1999, 3698, 652-65.
2. Lawson, W. D.; Nielson, S.; Putley, E. H. & Young, A. S. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe. J. Phys. Chem. Solids, 1959, 9, 325-29.
3. Kruse, P.W. & Pickenpaugh, T.D. Air Force Technical Monitor, U.S. Air Force Contract AF33(616)-7901. Honeywell Research Center, Hopkins, Minnesota.
4. Kruse, P.W.; Blue, M.D.; Garfunkel, J.H. & Saur, W.D. Long wavelength photoeffects in mercury selenide, mercury telluride and mercury telluride-cadmium telluride. Infrared Phys., 1962, 2, 53.
5. Rogalski, A. Infrared Detectors. Gordon and Breach, London, 2000.
6. Piotrowski, J. & Gawron, W. Ultimate performance of infrared photodetectors and figure of merit of detector material. Infrared Phys. Technol. 1997, 38, 63-68.
7. Rogalski, A. New Ternary Alloy Systems for Infrared Detectors. SPIE Optical Engineering Press, Bellingham, 1994.
8. Johnson, J.L. The InAs/GaInSb strained layer superlattice as an infrared detector material: An overview, Proceedings SPIE.
9. Elliott, T. New infrared and other applications of narrow gap semiconductors. Proceedings SPIE, 1998, 3436, 763-75.
10. Rogalski, A. Comparison of the performance of quantum well and conventional bulk infrared photodetectors. Infrared Phys. Technol., 1997, 38, 295-10.
11. Vural, K.; Kozlowski, L.J.; Cooper, D.E.; Chen, C.A.; Bostrup, G.; Cabelli, C.; Arias, J.M.; Bajaj, J.; Hodapp, K.W.; Hall, D.N.B.; Kleinhans, W.E.; Price, G.G. & Pinter, J.A. 2048 × 2048 HgCdTe focal plane arrays for astronomy applications. Proceedings SPIE, 3698, 1999, 24-35.
12. Reine, M.B. Photovoltaic detectors in HgCdTe, In Infrared detectors and emitters: Materials and devices, edited by P. Capper and C.T. Elliott. Chapman and Hall, London, 2000.
13. Rodot, M.; Verie, C.; Marfaing, Y.; Besson, J. & Lebloch, H. Semiconductor lasers and fast detectors in the infrared (3 to 15 μm). IEEE J. Quant. Electron. 1966, 2, 586-93.
14. Melngailis, I.; Keicher, W.E.; Freed, C.; Marcus, S.; Edwards, B.E.; Sanchez, A.; Yee, T. & Spears, D.L. Laser radar component technology. Proceedings IEEE, 1996, 84, 227-67.
15. Cohen-Solal, G.D. & Lussereau, A.G. US Patent 3, 988, 774.1976.
16. Infrared detectors - product profile. GEC-Marconi Infra-Red Limited, 1997.
17. Turner, A.; Teherani, T.; Ehmke, J.; Pettitt, C.; Conlon, P.; Beck, J.; McCormack, K.; Colombo, L.; Lahutsky, T.: Murphy, T. & Williams, B. Producibility of VIP™ scanning focal plane arrays. Proceedings SPIE 1994, 2228, 237-48.
18. Bubulac, L.O. & Tennant, W.E. Role of Hg in junction formation in ion-implanted HgCdTe. Appl. Phys. Lett., 1987, 51, 355-57.
19. Destefanis, G. & Chamonal, J.P. Large improvement in HgCdTe photovoltaic detector performances at LETI. J. Electron. Mater., 1993, 22, 1027-32.
20. +-on-p HgCdTe photodiodes. J. Appl. Phys., 1996, 80, 2483-489.
21. Ashley, T. & Elliott, C.T. Non-equilibrium mode of operation for infrared detection. Electron. Letters, 1985, 21, 451-52.
22. Ashley, T.; Elliott, T.C & White, A.M. Non-equilibrium devices for infrared detection. Proceedings SPIE, 1985, 572, 123-32.
23. Tobin, S.P.; Weiler, M.H.; Hutchins, M.A.; Parodos, T. & Norton, P.W. Advances in composition control for 16 μm LPE p-on-n HgCdTe heteroj unction photodiodes for remote sensing applications at 60 K. J. Electron. Mater., 1999, 28, 596-02.
24. Arias, J.M.; Pasko, J.G.; Zandian, M.; Kozlowski, L.J. & DeWames, R.E. Molecular beam epitaxy HgCdTe infrared photovoltaic detectors. Optical Engineering, 1994, 33, 1422-428.
25. Tennant, W.E.; Cockrum, C.A.; Gilpin, J.B.; Kinch, M.A.; Reine, M.B. & Ruth, R.P. Key issues in HgCdTe-based focal plane arrays: a industry perspective. J. Vac. Sci: Technol., 1992, B10, 1359-369.
26. Tung, T.; DeArmond, L.V.; Herald, R.F.; Herning, P.E.; Kalisher, M.H.; Olson, D.A.; Risser, R.F.; Stevens, A.P. & Tighe, S.J. State-of the-art of Hg-melt LPE HgCdTe at Santa Barbara Research Center. Proceedings SPIE, 1992, 1735, 109-34.
27. de Lyon, T.J.; Rajavel, R.D.; Jensen, J.E.; Wu, O.K.; Johnson, S.M.; Cockrum, C.A. & Venzor, G.M. Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy. J. Electron. Mater., 1996, 25, 1341-346.
28. xTe heterostructure detectors on silicon substrates. J. Electron. Mater., 1998, 27, 546-49.
29. Rogalski, A. Heterostructure infrared photovoltaic detectors. Infared Phys. Technol., 2000, 41, 213-38.
30. Piotrowski, J.; Galus, W. & M. Grudzien', Near-room temperature IR photodetectors. Infrared Physics, 31, 1-48.
31. Johnson, S.M.; de Lyon, T.J.; Cockrum, C.A.; Hamilton, W.J.; Tung, T.; Gesswein, F.I.; Baumgratz, B.A.; Ruzicka, L.M.; Wu, O.K. & Torh, J.A. Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays. J. Electron Mater., 1995, 24, 467-73.
32. Vural, K. Mercury cadmium telluride short-and medium-wavelength infrared staring focal plane arrays. Optical Engineering, 1987, 26, 201-08.
33. Kozlowski, LJ.; Bailey, R.B.; Cabelli, S.A.; Cooper, D.E.; Gergis, I.S.; Chen, A.C.; McLevige, W.V.; Bostrup, G.L.; Vural, K.; Tennant, W.E.; P.H. Howard, High-performance 5 μm 640 × 480 HgCdTe-on-sapphire focal plane arrays. Optical Engineering , 1994, 33, 54-63.
34. Kozlowski, L.J. HgCdTe focal plane arrays for high performance infrared cameras. Proceedings SPIE 3179, 1997, 200-11.
35. de Lyon, T.J.; Rajavel, R.D.; Vigil, J.A.; Jensen, J.E.; Wu, O.K.; Cockrum, C.A.; Johnson, S.M.; Venzor, G.M.; Bailey, S.L.; Kasai, I.; Ahlgren, W.L. & Smith, M.S. Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications. J. Electron. Mater., 1998, 27, 550-55.
36. Kozlowski, L.J.; Vural, K.; Bui, D.Q.; Bailey, R.B.; Cooper, D.E. & Stephenson, D.M. Status and direction of PACE-1 HgCdTe FPAs for astronomy. Proceedings SPIE, 1993, 1946, 148-60.
37. Kozlowski, L.J.; Vural, K.; Cabelli, S.C.; Chen, C.Y.; Cooper, D.E.; Bostrup, G.L.; Stephenson, D.M.; McLevige, W.L.; Bailey, R.B.; Hodapp, K.; Hall, D. & Kleinhans, W.E. 2.5 μm PACE-1 HgCdTe 1024×1024 FPA for infrared astronomy. Proceedings SPIE, 1994, 2268, 353-64.
38. Bubulac, L.O.; Tennant, W.E.; Pasko, J.G.; Kozlowski, L.J.; Zandian, M.E. Motamedi, DeWames, R.E.; Bajaj, J.; Nayar, N.; McLevige, W.V.; Gluck, N.S.; Melendes, R.; Cooper, D.E.; Edwall, D.D.; Arias, J.M. & Hall, R. High performance SWIR HgCdTe detector arrays. J. Electron. Mater., 1997, 26, 649-55.
39. Rogalski, A. & Ciupa, R. Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes. J. Electron. Mater., 1997, 28, 630-36.
40. Humpreys, R.G. Radiative lifetime in semiconductors for infrared detection. Infrared Physics. 1986, 26, 337-42.
41. Kozlowski, L.J. HgCdTe focal plane arrays for high performance infrared camera. Proceedings SPIE, 1997, 3179, 200-11.
42. Rogalski, A.; Rutkowski, J. & Adamiec, K. Narrow Gap semiconductor photodiodes. SPIE Optical Engineering Press, Bellingham, 2000.
43. Nemirovsky, Y.; Rosenfeld, D.; Adar, R. & Kornfeld, A. Tunnelling and dark currents in HgCdTe photodiodes. J. Vac. Sci. Technol., 1989, A7, 528-35.
44. DeWames, R.E.; Williams, G.M.; Pasko, J.G. & Vanderwyck, A.H.B. Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation. J. Cryst. Growth., 1988, 86, 849-58.
45. Nemirovsky, Y. ; Fastow, R.; Meyassed, M. & Unikovsky, A. Trapping effects in HgCdTe, J. Vac. Sci. Technol., 1991, B9, 1829-1839 ().
46. Johnson, S.M.; Rhiger, D.R.; Rosbeck, J.P.; Peterson, J.M.; Taylor, S.M. & Boyd, M.E. Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors. J. Vac. Sci. Technol., 1992, B10, 1499-506.
47. Chen, M.C.; List, R.S.; Chandra, D.; Bevan, M.J.; Colombo, L. & Schaake, H.F. Key performance-limiting defects in p-on-n HgCdTe heterojunction infrared photodiodes. J. Electron. Mater., 1996, 25, 1375-82.
48. List, R.S.; Tregilgas, J.H.; Turner, A.M.; Beck, J.D. & Ehmke, J.C. Electrical effects of subgrain boundaries, twins, dislocations and Te precipitation on LWIR HgCdTe photodiode arrays. Proceedings SPIE, 1994, 2228, 274-82.
49. Tidrow, M.Z.; Beck, W.A.; Clark, W.W.; H.K.; Pollehn, Little, J.W.; Dhar, N.K.; Leavitt, P.R.; Kennedy, S.W.; Beekman, D.W.; Goldberg, A.C. & Dyer, W.R. Device physics and focal plane array applications of QWIP and MCT. Opto-Electron Rev., 1999, 7, 283-96.
50. Rogalski, A. Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays. Infrared Phys. Technol., 1999, 40, 279-94.
51. Rajavel, R.D.; Jamba, D.M.; Wu, O.K.; Jensen, J.E.; Wilson, J.A.; Patten, E.A.; Kosai, K.; Goetz, P.; Chapman, G.R. & Radford, W.A. High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy. J. Cryst. Growth , 1997, 175, 653-58.
52. Rajavel, R.D.; Jamba, D.M.; Jensen, J.E.; Wu, O.K.; Wilson, J.A.; Johnson, J.L.; Patten, E.A.; Kasai, K.; Goetz, P.M. & Johnson, S.M. Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors. J. Electron. Mater.. 1998, 27, 747-51.
53. Mitra, P.; Barnes, S.L.; Case, F.C.; Reine, M.B.; O'Dette, P.; Starr, R.; Hairston, A.; Kuhler, K.; Weiler, M.H. & Musicant, B.L. MOCVD of band gap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays. J. Electron. Mater., 1997, 26, 482-87.
54. Reine, M.B.; Hairston, A.; O'Dette, P.; Tobin, S.P.; Smith, F.T.J.; Musicant, B.L.; Mitra, P. & Case, F.C. Simultaneous MW/LW dual-band MOCVD HgCdTe 64×64 FPAs. Proceedings SPIE, 1998, 3379, 200-12.
55. Ferret, P.; Zanatta, J.P.; Hamelin, R.; Cremer, S.; Million, A.; Wolny, M. & Destefanis, G. J. Electron. Mater., 2000, 29.
56. Johnson, S.M.; Johnson, J.L.; Hamilton, W.J.; Patten, E.A.; Peterson, J.M.; Leonard, D.B.; Strand, T.A.; Durham, J.H.; Randall, V.K.; deLyon, T.J.; Jensen, J.E. & Gorwitz, M.D. J. Electron. Mater., 2000, 29.
57. Kozlowski, L.J. ; Vural, K.; Luo, J.; Tomasini, A.; Liu, T. & Kleinhans, W.E. Low-noise infrared and visible focal plane arrays. Opto-Electron Rev., 1999, 7, 259-69.
58. Bertrand, F.; Tissot, J.L. & Destefanis, G. Second-generation cooled infrared detectors. State-of-the-art and prospects. In Physics of semiconductor devices, edited by Vikram Kumar and S.K. Agarwal. Narosa Publishing House, New Delhi, 1988.
59. Hamit, F. Military infrared takes to the road: The Cadillac's oncoming night vision option. Advanced Imaging, 1998, 13(10), 34-35.
60. Piotrowki, J.; Nowak, Z.; Antoszewski, J.; Musca, C.; Dell, J. & Faraone, L. A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions. Semicond. Sci. Technol., 1998, 13, 1209-214.
61. xTe LWIR detectors. Proceedings SPIE.
62. Sengupta, O.K.; Gunapala, S.D.; George, T.; Bandara, S.V.; Chang-Chien, C.N.; Leon, R.; Kayali, S.; Kuo, H.C.; Fang, W.; Liu, H.C. & Stillman, G.E. Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si Substrates. Proceedings SPIE, 1998, 3379, 410-22.