Minimizing metal etch rate pattern sensitivity in a high density plasma etcher

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 697-701

  Gabriel, Calvin T ^a   Zheng, Jie ^a   Abraham, Susan C ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001026953     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580804     Document Type: Article

References (6)

1. R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B 10, 2133 (1992).
2. R. Christie, S. Burns, V. S. Grewal, and B. Spuler, IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Cambridge, MA, 1994, p. 224.
3. C. Gabriel and J. Zheng, Proceedings of the 11th Symposium on Plasma Processing (The Electrochemical Society, Pennington, NJ, 1996), p. 259.
4. S. C. Abraham, C. T. Gabriel, and J. Zheng, J. Vac. Sci. Technol. A, these proceedings.
5. K. Tokunaga, F. C. Redeker, D. A. Danner, and D. W. Hess, J. Electrochem. Soc. 128, 851 (1981).
6. J. Zheng, A. Shahram, C. T. Gabriel, J. P. McVittie, and S. C. Abraham (unpublished).