Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 6, 2001, Pages 721-724

  Wang, P F ^a   Ding, S J ^a   Zhang, J Y ^a   Zhang, D W ^a   Wang, J T ^a   Lee, W W ^b  

^a FUDAN UNIVERSITY   (China)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; ULSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

IONIC POLARIZATION;

AMORPHOUS FILMS;

EID: 0034969827     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390000562     Document Type: Article

References (13)