Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 259-263

  Frey, T ^a   As, D J ^a   Schikora, D ^a   Lischka, K ^a   Holst, J ^b   Hoffmann, A ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242903     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<259::AID-PSSB259>3.0.CO;2-8     Document Type: Article

References (9)

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9. R. GOLDHAHN, J. SCHEINER, S. SHOKHOVETS, T. FREY, U. KÖHLER, D.J. AS, and K. LISCHKA, 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (b) 216, 265 (1999).