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Computational Materials Science

Volumn 21, Issue 1, 2001, Pages 135-148

A comparison of orthogonal sp-based tight-binding models for silicon

(5) Godwin, Paul D b Roberts, Amanda Killen b Yu, Decai b Dean, Kate b Clancy, Paulette a

a Cornell University (United States)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS;

TIGHT-BINDING MODELS;

SEMICONDUCTING SILICON;

EID: 0034916540 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0256(00)00223-8 Document Type: Article

Times cited : (5)

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