Electronic properties of defects introduced in n-and p-type Si1-xGex during ion etching

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 133-138

  Goodman, S A ^a   Auret, F D ^a   Mamor, M ^a   Deenapanray, P N K ^a   Meyer, W E ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Defects; Ion etching; Particle irradiation; SiGe

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; ETCHING; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ION ASSISTED ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031366184     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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