Monolithic low-noise amplifiers up to 10 GHz in silicon and SiGe bipolar technologies

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Zöschg, Dietmar ^a,b   Wilhelm, Wilhelm ^a   Knapp, Herbert ^a   Aufinger, Klaus ^a   Böck, Josef ^a   Meister, T F ^a   Wurzer, Martin ^a   Wohlmuth, Hans Dieter ^a   Scholtz, Arpad L ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON ALLOYS; WIRELESS TELECOMMUNICATION SYSTEMS;

CIRCUIT PRINCIPLES; DESIGN RULES; NOISE PROPERTIES; SIGE BIPOLAR TECHNOLOGY; WIRELESS COMMUNICATIONS;

LOW NOISE AMPLIFIERS;

EID: 84897531115     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338728     Document Type: Conference Paper

References (10)

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