A Ku band SiGe low noise amplifier

2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Volumn , Issue , 2000, Pages 52-54

  Schad, K B ^a   Urben, U ^a,b   Soenmez, E ^a   Abele, P ^a   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b TEMIC Semiconductors   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RECONFIGURABLE HARDWARE; SILICON; SILICON ALLOYS; TELEVISION BROADCASTING;

COMMUNICATION MARKET; DEVICE TECHNOLOGIES; LOW NOISE FIGURE; MULTIMEDIA DELIVERY; POTENTIAL MARKETS; SATELLITE SYSTEM; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; TV BROADCASTING;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 84962018407     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2000.844296     Document Type: Conference Paper

References (4)

1. Matthias Bopp and Andreas Schüppen, "SiGe Transistor Technology for RF Applications";Microwave Journal, Vol 42 No. 6,pp 22-39,June 1999
2. H. Schumacher, U. Erben, and A. Gruhle, "Low-noise performance of SiGe heterojunction bipolar transistors";IEEE Microwave & Millimeter-Wave Monolithic Circuits Symposium, San Diego, CA, May 22-25, 1994
3. U. Erben, H. Schumacher, A. Schüppen, H. Dietrich, and J. Arndt, "Application of a Production Ready SiGe HBT Process to 1.9, 5.7, and 10 GHZ Low Noise Amplifier MMICs"; IEEE/MTT Silicon Monolithic Integrated Circuits in RF Systems Symposium, Ann Arbor,MI, USA, 17-18 Sept. 1998
4. H.T. Friis, "Noise figure of radio receivers";in Proceedings of IRE, Vol. 32, No. 7, pp. 419-422, 1944