2 dB noise figure, 10.5 GHz LNA using SiGe bipolar technology

Electronics Letters

Volumn 35, Issue 25, 1999, Pages 2195-2196

  Zoschg D ^a   Wilhelm, W ^b   Meister, T F ^b   Knapp, H ^b   Wohlmuth, H D ^b   Aufinger, K ^b   Wurzer, M ^b   Bock J ^b   Schafer H ^b   Scholtz, A ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS (LNA);

AMPLIFIERS (ELECTRONIC);

EID: 17444447500     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991498     Document Type: Article

References (4)

1. ERBEN, U., SCHUMACHER, A., SCHÜPPEN, A., and ARNDT, J.: 'Application of SiGe heterojunction bipolar transistor in 5.8 and 10GHz low-noise amplifiers', Electron. Lett.. 1998, 34, (15), pp. 1497-1500
2. LONG, J.R., COPELAND, M.A., KOVACIC, S.J., MALHI, D.S., and HARAME, D.L.: 'RF analog and digital circuits in SiGe technology'. IEEE Int. Solid-State Circuits Conf., February 1996, (IEEE), Paper TP 5.3, pp. 52-54
3. MEISTER, T.F., SCHÄFER, H., FRANOSCH, M., MOLZER, M., AUFINGER, K., SCHELER, U., WALZ, C., STOLZ, M., BOGUTH, S., and BÖCK, J.: 'SiGe base bipolar technology with 74GHz fmax and 11 ps gate delay'. IEDM Tech. Dig., 1995, pp. 739-742
4. AINSPAN, H., SOYUER, M., PLOUCHART, J.-O., and BURGHARTZ, J.: 'A 6.25GHz low DC power low-noise amplifier in SiGe'. IEEE Custom Integrated Circuits Conf., 1997, (IEEE), pp. 177-180