Scalable high frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1996, Pages 61-64

  Voinigescu, S P ^a   Maliepaard, M C ^a   Schroter, M ^a   Schvan, P ^a   Harame, D L ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC NETWORK PARAMETERS; IMPEDANCE MATCHING (ELECTRIC); OPTIMIZATION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

ANALYTICAL HIGH FREQUENCY NOISE PARAMETER EQUATIONS; LOW NOISE AMPLIFIERS (LNA); TRANSISTOR NOISE PARAMETERS;

BIPOLAR TRANSISTORS;

EID: 0030399724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)