Low-k1 imaging: How low can we go?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4226, Issue , 2000, Pages 1-15

  Finders, J ^a   Eurlings, M ^a   Van Ingen Schenau, K ^a   Dusa, M ^a   Jenkins, P ^a  

^a ASML   (Netherlands)

Author keywords

Alternating PSM; Dipole; Low k1 lithography

Indexed keywords

ABERRATIONS; DIFFRACTION; IMAGE ENHANCEMENT; IMAGING TECHNIQUES; INTEGRATED CIRCUIT MANUFACTURE; MASKS;

ALTERNATING PHASE SHIFT MASK; DIPOLE ILLUMINATION;

PHOTOLITHOGRAPHY;

EID: 0034454907     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.404849     Document Type: Conference Paper

References (9)

1. DUV lithography (KrF) for 130-nm using off-axis illumination and assisting features
2. Mask error factor: Causes and implications for process latitude
3. Patterning 220 nm pitch DRAM pattern by using double mask exposure
4. Forbidden pitches for 130 nm lithography and below
5. KrF lithography for 130 nm
6. Alt-PSM for 0.10-μm and 0.13-μm polypatterning
7. Method of expanding process window for the double exposure technique with alt-PSM
8. Limits of optical lithography