Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 1021-1027

  Bollaert, S ^a   Cordier, Y ^a   Zaknoune, M ^a   Happy, H ^a   Hoel, V ^a   Lepilliet, S ^a   Theron D ^a   Cappy, A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

REVERSE BREAKDOWN VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033727530     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00329-9     Document Type: Article

References (12)

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