Measurement and analysis of reticle and wafer level contributions to total CD variation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 144-152

  Preil, Moshe E ^a   Mack, Chris A ^a  

^a KLA TENCOR CORPORATION   (United States)

Author keywords

Critical dimensions; Mask error factor; Process window; Reticle specifications

Indexed keywords

COMPUTER AIDED SOFTWARE ENGINEERING; COMPUTER HARDWARE; MASKS; SYSTEMS ENGINEERING; WSI CIRCUITS;

MASK ERROR FACTORS;

LITHOGRAPHY;

EID: 0034839492     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425200     Document Type: Article

References (12)

1. Lithographic effects of mask CD error
2. The business dynamics of lithography at very low k1 factor
3. Sources of CD variation
4. Analytic approach to understanding the impact of mask errors on optical lithography
5. Characterization of linewidth variation
6. The MEF: Causes and implications for process latitude
7. Techniques to detect and analyze photomask CD uniformity
8. Process window metrology
9. Good OPC: Where will this drive mask CD tolerance and mask grid size
10. Effects of real masks on wafer patterning