Very low temperature growth of polycrystalline silicon using SiF4/H2

Solid State Communications

Volumn 101, Issue 1, 1997, Pages 17-20

  Ryu, Bong Yeol ^a   Ryu, Jai Il ^a   Kim, Hyun Chul ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ENERGY GAP; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; THIN FILMS; VOLUME FRACTION;

POLYCRYSTALLINE SILICON; QUANTUM CONFINEMENT EFFECT; REMOTE PLASMA CHEMICAL VAPOR DEPOSITION;

SILICON;

EID: 0030735122     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00524-8     Document Type: Article

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