Numerical study of InGaN pattern formation caused by phase separation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1044-1050

  Okumura, Toshiyuki ^a   Ishida, Masaya ^a   Kamikawa, Takeshi ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Cell dynamical system; Dot like structure; Ingan; Light emitting device; Numerical study; Pattern formation; Phase separation

Indexed keywords

FREE ENERGY; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHASE SEPARATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN;

CELL DYNAMICAL SYSTEM; DOT LIKE STRUCTURE; GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033742985     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1044     Document Type: Article

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