Comparison of electrical CD measurements and cross-section lattice-plane counts of sub-micrometer features replicated in (100) silicon-on-insulator material

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3998, Issue , 2000, Pages 74-83

  Cresswell, Michael W ^a   Bonevich, John E ^a   Headley, Thomas J ^a   Allen, Richard A ^a   Giannuzzi, Lucille A ^a   Everist, Sarah C ^a   Ghoshtagore, Rathindra N ^a   Shea, Patrick J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; MICROMACHINING; RESISTORS; SCANNING ELECTRON MICROSCOPY; STANDARDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL DIMENSIONS (CD);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033719197     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)