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Volumn 3316, Issue 2, 1998, Pages 878-883
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GaN based microwave power HEMTs
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRIC BREAKDOWN OF SOLIDS;
GATES (TRANSISTOR);
MICROWAVE DEVICES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SHEET DENSITY;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0032295224
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (13)
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References (9)
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