Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation

IEEE Electron Device Letters

Volumn 19, Issue 11, 1998, Pages 420-422

  Qin, Shu ^a,b   Zhou, Yuanzhong ^c   Chan, Chung ^a,c   Chu, Paul K ^a,d  

^a IEEE   (United States)

^b Silicon Genesis Corporation   (United States)

^c Northeastern University   (United States)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE; ION IMPLANTATION; PERMITTIVITY; SILICA; THIN FILMS;

MULTILEVEL INTERCONNECTION; PLASMA ION IMPLANTATION;

ULSI CIRCUITS;

EID: 0032205807     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.728899     Document Type: Article

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