DRAM technology: Outlook and challenges

ICVC 1999 - 6th International Conference on VLSI and CAD

Volumn , Issue , 1999, Pages 182-186

  Comfort, J H ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84994880311     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICVC.1999.820868     Document Type: Conference Paper

References (3)

1. R. Shuster, "Practical Resolution Limit of KrF Lithography". Int. Symp. on VLSI Tech., June 1999.
2. U. Grucnig. "A Novel Trench DRAM Cell with a VERtical Acccss Transistor and BuriEd Strap (VERI BEST) for 4Gb/16Gb. EDM. Dec. 1999.
3. T. Rupp. "Estending Trench DRAM Technology to 0.15um Groundrule and Beyond. IEDM. Dcc. 1999.