Effect of hydrogen on p-type epitaxial silicon sheet-resistance measurements

Electrochemical and Solid-State Letters

Volumn 1, Issue 2, 1998, Pages 100-101

  Kamins, T I ^a,b   Nauka, K ^a,b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; GAS ADSORPTION; HYDROGEN; OXIDATION;

SURFACE POTENTIAL;

SEMICONDUCTING SILICON;

EID: 0032139955     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390650     Document Type: Article

References (2)

1. K. Nauka and T. I Kamins, J. Electrochem. Soc., Submitted.
2. O. Vatel, S. Verhaverbeke, H. Bender, M. Caymax, F. Chollet, B. Vermeire, P. Mertens, E. Andre, and M. Heyns, Jpn. J. Appl. Phys., 32, L1489 (1993).