Comparison of TMG with TEG for the growth of InxGa1-xAs

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 146-150

  Glew, Richard William ^a   Grim Bogdan, Karen ^a   Tzafaras, Nikolaos ^a   Nakahara, Shohei ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE TRANSITIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; STRAIN;

DIMETHYLZINC; THYETHYLINDIUM; TRIETHYLGALLIUM; TRIMETHYLGALLIUM;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033903679     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0110-8     Document Type: Article

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