MBE grown InGaN quantum dots and quantum wells: Effects of in-plane localization

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 195-197

  Dalmasso, S ^a   Damilano, B ^a   Grandjean, N ^a   Massies, J ^a   Leroux, M ^a   Reverchon, J L ^b   Duboz, J Y ^b  

^a CRHEA CNRS   (France)

^b 91404 Cedex   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOCURRENTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034505996     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01502-9     Document Type: Article

References (9)

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