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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 117-123

InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport

(5) Velling, P a Janssen G a Agethen, M a Prost, W a Tegude, F J a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

(0 0 2) reflection; InGaP GaAs; Interface; MOVPE; RTD; Superlattice; X ray

Indexed keywords

COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; LOW TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TUNNEL DIODES; X RAY CRYSTALLOGRAPHY;

DOUBLE BARRIER RESONANT TUNNELING DIODES (DB-RTD); HIGH RESOLUTION X RAY DIFFRACTION (HR-XRD); LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (LP-MOVPE); X RAY REFLECTION;

HETEROJUNCTIONS;

EID: 0032477142 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00712-X Document Type: Article

Times cited : (10)

References (15)

1
- 21544457576
- Q. Liu, S. Derksen, A. Lindner, F. Scheffer, W. Prost, F.J. Tegude, J. Appl. Phys. 77 (1995) 1154.
- (1995) J. Appl. Phys. , vol.77 , pp. 1154
- Liu, Q.¹ Derksen, S.² Lindner, A.³ Scheffer, F.⁴ Prost, W.⁵ Tegude, F.J.⁶

2
- 0028257658
- F. Scheffer, C. Heedt, R. Reuter, A. Lindner, Q. Liu, W. Prost, F.J. Tegude, Electron. Lett. 30 (1994) 169.
- (1994) Electron. Lett. , vol.30 , pp. 169
- Scheffer, F.¹ Heedt, C.² Reuter, R.³ Lindner, A.⁴ Liu, Q.⁵ Prost, W.⁶ Tegude, F.J.⁷

3
- 0026854479
- T. Lauterbach, W. Pletschen, K.-H. Bachem, IEEE Trans. Electron Dev. 39 (1992) 753.
- (1992) IEEE Trans. Electron Dev. , vol.39 , pp. 753
- Lauterbach, T.¹ Pletschen, W.² Bachem, K.-H.³

4
- 0346790802
- D. Lippens, P. Mounaix, V. Sadaune, Appl. Phys. 71 (4) (1992).
- (1992) Appl. Phys. , vol.71 , Issue.4
- Lippens, D.¹ Mounaix, P.² Sadaune, V.³

5
- 5544269203
- X. He, M. Razeghi, J. Appl. Phys. 73 (1993) 3284.
- (1993) J. Appl. Phys. , vol.73 , pp. 3284
- He, X.¹ Razeghi, M.²

6
- 0029208391
- W. Prost, F. Scheffer, Q. Liu, A. Lindner, H. Lakner, I. Gyuro, F.J. Tegude, J. Crystal Growth 146 (1994) 538.
- (1994) J. Crystal Growth , vol.146 , pp. 538
- Prost, W.¹ Scheffer, F.² Liu, Q.³ Lindner, A.⁴ Lakner, H.⁵ Gyuro, I.⁶ Tegude, F.J.⁷

7
- 0026945570
- R. Bhat, M.A. Koza, M.J.S.P. Brasil, R.E. Nahory, C.J. Palmstorm, B.J. Wilkens, J. Crystal Growth 124 (1992) 576.
- (1992) J. Crystal Growth , vol.124 , pp. 576
- Bhat, R.¹ Koza, M.A.² Brasil, M.J.S.P.³ Nahory, R.E.⁴ Palmstorm, C.J.⁵ Wilkens, B.J.⁶

8
- 0000779342
- T. Nittono, F. Hyuga, Appl. Phys. 81 (1997) 2607.
- (1997) Appl. Phys. , vol.81 , pp. 2607
- Nittono, T.¹ Hyuga, F.²

9
- 0346790801
- Q. Liu, A. Brennemann, H. Hardtdegen, A. Lindner, W. Prost, F.J. Tegude, J. Appl. Phys. 79 (1996).
- (1996) J. Appl. Phys. , vol.79
- Liu, Q.¹ Brennemann, A.² Hardtdegen, H.³ Lindner, A.⁴ Prost, W.⁵ Tegude, F.J.⁶

10
- 0030687705
- A. Lindner, P. Velling, W. Prost, A. Wiersch, E. Kuphal, A. Burchard, R. Margerle, M. Deicher, F.J. Tegude, J. Crystal Growth 170 (1997) 287.
- (1997) J. Crystal Growth , vol.170 , pp. 287
- Lindner, A.¹ Velling, P.² Prost, W.³ Wiersch, A.⁴ Kuphal, E.⁵ Burchard, A.⁶ Margerle, R.⁷ Deicher, M.⁸ Tegude, F.J.⁹

11
- 0019622111
- V.S. Speriosu, J. Appl. Phys. 52 (1981) 6094.
- (1981) J. Appl. Phys. , vol.52 , pp. 6094
- Speriosu, V.S.¹

12
- 0021494411
- V.S. Speriosu, T. Vreeland Jr., J. Appl. Phys. 56 (1984) 1591.
- (1984) J. Appl. Phys. , vol.56 , pp. 1591
- Speriosu, V.S.¹ Vreeland T., Jr.²

13
- 0032046254
- W. Prost, M. Haase, P. Velling, Q. Liu, F.J. Tegude, Thin Solid Films 319 (1998) 25.
- (1998) Thin Solid Films , vol.319 , pp. 25
- Prost, W.¹ Haase, M.² Velling, P.³ Liu, Q.⁴ Tegude, F.J.⁵

14
- 0027887184
- R. Zaus, J. Appl. Crystallogr. 26 (1993) 801.
- (1993) J. Appl. Crystallogr. , vol.26 , pp. 801
- Zaus, R.¹

15
- 0000525689
- A.T. Macrander, G.P. Schwartz, G.J. Gualtieri, J. Appl. Phys. 64 (1988) 6733.
- (1988) J. Appl. Phys. , vol.64 , pp. 6733
- Macrander, A.T.¹ Schwartz, G.P.² Gualtieri, G.J.³

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