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Volumn 36, Issue 25, 2000, Pages 2075-2076

Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 μm

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG CELLS; LASER PULSES; LASER RESONATORS; MOLECULAR BEAM EPITAXY; OPTICAL COATINGS; OPTICAL COMMUNICATION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROMETERS;

EID: 0034504182     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001469     Document Type: Article
Times cited : (17)

References (9)
  • 1
    • 0031996455 scopus 로고    scopus 로고
    • 1.5μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser
    • HUFFAKER, D.L., DENG, H., and DEPPE, D.G.: '1.5μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser', IEEE Photonics Technol. Lett., 1998, 10, pp. 185-187
    • (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 185-187
    • Huffaker, D.L.1    Deng, H.2    Deppe, D.G.3
  • 2
    • 0001018053 scopus 로고    scopus 로고
    • 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
    • COLDREN, C.W., LARSON, M.C., SPRUYTTE, S.G., and HARRIS, J.S.: '1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions', Electron. Lett, 2000, 36, pp. 951-952
    • (2000) Electron. Lett , vol.36 , pp. 951-952
    • Coldren, C.W.1    Larson, M.C.2    Spruytte, S.G.3    Harris, J.S.4
  • 4
    • 0032115348 scopus 로고    scopus 로고
    • Uniform threshold current, continuous wave, singlemode 1300nm vertical cavity lasers from 0 to 70C
    • JAYARAMAN, V., GESKE, J.C., MACDOUGAL, M.H., PETERS, F.H., LOWES, T.D., and CHAR, T.T: 'Uniform threshold current, continuous wave, singlemode 1300nm vertical cavity lasers from 0 to 70C', Electron. Lett., 1998, 34, pp. 1405-1407
    • (1998) Electron. Lett. , vol.34 , pp. 1405-1407
    • Jayaraman, V.1    Geske, J.C.2    Macdougal, M.H.3    Peters, F.H.4    Lowes, T.D.5    Char, T.T.6
  • 7
    • 0033871367 scopus 로고    scopus 로고
    • Room temperature low threshold CW operation of 1.23μm GaAsSb VCSELs on GaAs substrates
    • YAMADA, M., ANAN, T., KURIHARA, K., NISHI, K., TOKUTOME, K., and KAMEI, A.: 'Room temperature low threshold CW operation of 1.23μm GaAsSb VCSELs on GaAs substrates', Electron. Lett., 2000, 36, pp. 637-738
    • (2000) Electron. Lett. , vol.36 , pp. 637-738
    • Yamada, M.1    Anan, T.2    Kurihara, K.3    Nishi, K.4    Tokutome, K.5    Kamei, A.6
  • 8
    • 0034225043 scopus 로고    scopus 로고
    • Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on gaas substrates
    • YAMADA, M., ANAN, T., TOKUTOME, K., KAMEI, A., NISHI, K., and SUGOU, S.: 'Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates', IEEE Photonics Technol Lett., 2000, 12, pp. 774-776
    • (2000) IEEE Photonics Technol Lett. , vol.12 , pp. 774-776
    • Yamada, M.1    Anan, T.2    Tokutome, K.3    Kamei, A.4    Nishi, K.5    Sugou, S.6
  • 9
    • 0000776954 scopus 로고    scopus 로고
    • Electronic structure of GaSb/GaAs quantum domes
    • NORTH, S.M., BRIDDON, P.R., CUSACK, M.A., and JAROS, M.: 'Electronic structure of GaSb/GaAs quantum domes', Phys. Rev. B, 1998, 58, pp. 12601-12604
    • (1998) Phys. Rev. B , vol.58 , pp. 12601-12604
    • North, S.M.1    Briddon, P.R.2    Cusack, M.A.3    Jaros, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.