In-diffusion and isothermal annealing of iron-related defects in Czochralski N-type silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 1 PART A/B, 1998, Pages

  Tanaka, Shuji ^a   Kitagawa, Hajime ^a  

^a FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Annealing; CZ Si; Defect reactions; DLTS; Hall effect; In diffusion; Iron; Iron related complexes; n type Si

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DIFFUSION; HALL EFFECT; IRON;

ELECTRON THERMAL EMISSION RATES; ISOTHERMAL ANNEALING; VACUUM EVAPORATION;

SEMICONDUCTING SILICON;

EID: 0031675162     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l4     Document Type: Article

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