Diffusion and electrical properties of iron-related defects in n-type silicon grown by Czochralski- and floating zone method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4656-4662

  Tanaka, Shuji ^a   Kitagawa, Hajime ^a  

^a FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Annealing; CZ silicon; DLTS; FZ silicon; Hall effect; In diffusion; Iron; Iron complexes; Iron related defects; n type silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; HALL EFFECT; IRON; SCHOTTKY BARRIER DIODES;

DEFECT REACTION; FLOATING ZONE METHODS; IRON RELATED DEFECTS; THERMAL EMISSION;

SEMICONDUCTING SILICON;

EID: 0032155323     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4656     Document Type: Article

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