Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a single set of physical parameters

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 186-189

  Quay, R ^a   Palankovski, V ^b   Chertouk, M ^a   Leuther, A ^a   Selberherr, S ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; IMPACT IONIZATION; LATTICE CONSTANTS; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034454726     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904289     Document Type: Article

References (11)

1. 30 nm gate InAlAs/InGaAs HEMTs lattice matched to InP substrates
2. High-gain 150-215 GHz MMIC amplifier with integral waveguide transitions
3. max of 350 GHz
4. Optimization of pseudomorphic HEMTs supported by numerical simulation
5. Simulation of gallium-arsenide based High Electron Mobility Transistors
6. New aspects and mechanism of Kink effect in InAlAs/InGaAs/InP inverted HFETs
7. An analysis of the Kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation
8. Breakdown in millimeter-wave power InP HEMT's: A comparison with GaAs PHEMT's
9. Investigation and modeling of impact ionization with regard to the RF- and noise performance of HFET
10. On-state breakdown in power HEMT's: Measurement and modeling
11. 1-xAs HEMTs on GaAs substrate: A new structure parameter