Simulation of gallium-arsenide based high electron mobility transistors

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 74-77

  Quay, R ^a   Massler, H ^a   Kellner, W ^a   Grasser, T ^a   Palankovski, V ^a   Selberherr, S ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; INTERFACES (MATERIALS); MESFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTROTHERMAL EFFECTS; SCHOTTKY CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033681187     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)