Measurement and analysis of reticle and wafer level contributions to total CD variation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4226, Issue , 2000, Pages 169-177

  Preil, M ^a   Mack, C A ^a  

^a KLA Tencor Austin   (United States)

Author keywords

Lithography simulation; Optical lithography; Reticle CD control

Indexed keywords

COMPUTER AIDED ANALYSIS; COMPUTER SIMULATION; MASKS; OPTICAL TESTING; SILICON WAFERS;

LITHOGRAPHY SIMULATION; OPTICAL LITHOGRAPHY; OPTICAL PROXIMITY CORRECTION; PHASE SHIFT MASKS; RETICLE CRITICAL DIMENSION CONTROL;

LITHOGRAPHY;

EID: 0034453957     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.404840     Document Type: Article

References (11)

1. Lithographic effects of mask CD error
2. The business dynamics of lithography at very low k1 factor
3. Sources of CD variation
4. Analytic approach to understanding the impact of mask errors on optical lithography
5. Characterization of linewidth variation
6. The MEF: Causes and implications for process latitude
7. Data analysis for photolithography
8. Techniques to detect and analyze photomask CD uniformity
9. Good OPC: Where will this drive mask CD tolerance and mask grid size
10. Effect of real masks on wafer patterning