Improvement in lateral IGBT design for 500V 3A one chip inverter ICs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 321-324

  Nakagawa, Akio ^a   Funaki, Hideyuki ^a   Yamaguchi, Yoshihiro ^a   Suzuki, Fumito ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPRESSORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INVERTERS; ELECTRIC RESISTANCE; ELECTRIC WAVEFORMS; GATES (TRANSISTOR); SEMICONDUCTING FILMS;

BONDING PAD; CHIP SIZE REDUCTION; COMPRESSOR MOTOR; INSULATED GATE BIPOLAR TRANSISTORS; INVERTED INTEGRATED CIRCUITS; VOLTAGE DROP;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032598893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)