A new analytical model for determination of breakdown voltage of resurf structures

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1353-1358

  Križaj, Dejan ^a   Charitat, Georges ^b   Amon, Slavko ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; OPTIMIZATION; SENSITIVITY ANALYSIS;

DIODE MODULATION EFFECT; REDUCED SURFACE FIELD;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030242274     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00051-2     Document Type: Review

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