Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals

Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

Volumn 19, Issue 2-4, 1997, Pages 233-239

  Wieteska, K ^a   Wierzchowski, W ^a   Graeff, W ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001403318     PISSN: 03926737     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03040978     Document Type: Article

References (6)

1. WiETESKA K., WiERZCHOWSKi W. and GRAEFF W., paper submitted to J. Appl. Cryst.
2. SHULPINA I. L., PETRASHEN P. V., CHUKHOWSKII F. N. and GADRIELYAN K. T., Tczisi Dokl IV Vsesoyitz. Sovctcli. Dcfccti Stnikturi v Polupromdnikah, Novosibirsk 23-25 Oktyabr 1984, part 2, p. 114 (in Russian).
3. BAK-MISIUK J., GRONKOWSKI J., HäRTWIG J. and WIERZCHOWSKI W., Pliys. Status SolidiA, 99 (1987) 345
4. WIETESKA K. and WIERZCHOWSKI W., Phys. Status Solidi A, 147 (1995) 55.
5. ZIEGLER J. F., BIERSACK J. P. and LITTMARK U., The Stopping and Range of Ions in Solids, edited by J. F. ZIEGLER (Pergamon Press) 1985.
6. CHUKHOVSKI F. N. and PETRASHEN P. V., Ada Cnjstallogr. A, 44 (1988) 8.