Relation between growth precursors and film properties for plasma deposition of a-Si:H at rates up to 100 Å/s

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Kessels, W M M ^a   Smets, A H M ^a   Hoefnagels, J P M ^a   Boogaarts, M G H ^a   Schram, D C ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FREE RADICALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILANES; SUBSTRATES; SURFACE REACTIONS; THERMAL EFFECTS;

DEPOSITION RATES; GROWTH PRECURSORS;

AMORPHOUS SILICON;

EID: 0034429669     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a4.2     Document Type: Conference Paper

References (14)

1. Lifbase: Database and spectral simulation program (version 1.5)