Structural and Optical Characterization of Thick GaN Films Grown by the Direct Reaction of Metal Ga and NH3 in CVD Reactor

Korean Journal of Chemical Engineering

Volumn 17, Issue 1, 2000, Pages 105-110

  Nahm, Kee Suk ^a   Yang, Seung Hyun ^a   Ahn, Sang Hyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Crystal Quality; Direct Reaction; Growth; Metallic Ga; Thick GaN

Indexed keywords

EID: 0034396146     PISSN: 02561115     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02789262     Document Type: Article

References (30)

1. Alcock, C. B., Itkin, V. P. and Horrigan, M. K., "Canadian Metallurgical Quarterly," Pergamon Press, New York (1984).
2. Detchprohm, T., Hiramatsu, K., Amano, H. and Akasaki, I., "Hydride Vapor Phase Epitaxial Growth of a High Quality GaN Film using a ZnO Buffer Layer," Appl. Phys. Lett., 61(22), 2688 (1992).
3. Elsner, J., Jones, R., Haugk, M., Gutierrez, R., Frauenheim, Th., Heggie, M. I., Oberg, S. and Briddon, P. R., "Effect of Oxygen on the Growth of (1010) GaN Surfaces: The Formation of Nanopipes," Appl. Phys. Lett., 73(24), 3530 (1998).
4. Fischer, S., Wetzel, C., Hansen, W. L. and Bourret-Courchesne, E. D., "Properties of GaN Grown at High Rates on Sapphire and on 6H-SiC," Appl. Phys. Lett., 69(18), 2716 (1996).
5. Grzegory, I., Jun, J., Krukowski, S., Bockowski, M. and Porowski, S., "Crystal Growth of III-N Compounds under High Nitrogen Pressure," Physica B, 185, 99 (1993).
6. Hashimoto, T., Imafuhi, O., Ishida, M., Terakoshi, Y., Sugino, T., Yoshikawa, A., Itoh, K. and Shirafuji, J., "Inheritance of Zinc-blende Structure from 3C-SiC/Si(001) Substrate in Growth of GaN by MOCVD," J. Crystal Growth, 169 (1996).
7. Hiroyama, Y. and Tamura, M., "Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)," Jpn. J. Appl. Phys., 37, L630 (1998).
8. Jones, R., Elsner, J., Haugk, M., Gutierrez, R., Frauenheim, T., Heggie, M. I., Oberg, S. and Briddon, P. R., "Interaction of Oxygen with Threading Dislocations in GaN," Phys. Stat. Sol., 171, 167 (1999).
9. Kang, J. Y. and Ogawa, T., "Precipitates in GaN Epilayers Grown on Sapphire Substrates," J. Materials Research, 13, 2100 (1998).
10. Kim, K. C., Shim, H. W., Suh, E.-K., Lee, H. J. and Nahm, K. S., "Growth of High Quality 3C-SiC on Si(111) Substrate by Chemical Vapor Deposition," Appl. Phys. Lett., 32(4), 588 (1998).
11. 4 Substrate," Appl. Phys. Lett., 67(17), 2521 (1995).
12. Kurai, S., Abe, T., Naoi, Y. and Sakai, S., Jpn. "Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition," Appl. Phys., 35, 1637 (1996).
13. Lee, Y. J., Kim, S. t., "Growth and Properties of Free-Standing GaN Substrates," J. Korean Appl. Soc., 33, s330 (1998).
14. Liliental-Weber, Z., Chen, Y., Rvimove, S. and Washburn, J., "Formation Mechanism of Nanotubes in GaN," Phys. Rev. Lett., 79, 2835 (1997).
15. Miyoshi, S., Onabe, K., Ohkouchi, N., Yaguchi, H., Ito, R., "MOVPE Growth of Cubic GaN on GaAs using Dimethylhydrazine," J. Crystal Growth, 124, 439 (1992).
16. Morkoc, H., Botchkarev, A., Salvador, A. and Sverdlov, B., "GaN Based III-V Nitrides by Molecular Beam Epitaxy," J. Crystal Growth, 150, 887 (1995).
17. Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S., "High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Wall Structures," Jpn. J. Appl. Phys., 34, L797 (1995).
18. Nakamura, S., Senoh, M., Isawa, N. and Nagahama, S., "High-power InGaN Single-quantum-well Structure Blue and Violet Light-emitting Diodes," Appl. Phys. Lett., 67, 1868 (1995).
19. Neugebauer, J. and Van de Wall, C. G., "Atomic Geometry and Electronic Structure of Native Defects in GaN," Phys. Rev. B, 50(11), 8067 (1994).
20. Nishida, K., Haneda, S., Hera, K., Munekata, H. and Kukimoto, H., "MOVPE of GaN using a Specifically Designed Two-flow Horizontal Reactor," J. Crystal Growth, 170, 321 (1997).
21. Noguez, C., "Spectroscopic Theoretical Study of the Atomic Reconstruction of GaN (1010)," Phys. Rev. B, 58, 12641 (1998).
22. Northrup, J. E., Neugebauer, J. and Romano, L. T., "Inversion Domain and Stacking Mismatch Boundaries in GaN," Appl. Rev. Lett., 77, 103 (1996).
23. Ogino, T. and Aoki, M., "Mechanism of Yellow Luminescence in GaN," Jpn. J. Appl. Phys., 19, 2395 (1980).
24. Park, D. C., Ko, H. C., Fujita, S. and Fujita, S., "Growth of GaN on Indium Tin Oxide Glass Substrates by RF Plasma-enhanced Chemical Vapor Deposition Method," Jpn J. Appl. Phys. Lett., 37, L294 (1998).
25. Ponce, F. A., Bour, D. P., Gotz, W. and Johnson, N. M., "Homoepitaxy of GaN on Polished Bulk Single Crystals by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., 68(7), 917 (1996).
26. Powell, R. C., Lee, N. E., Kim, Y. W. and Greene, J. E., "Heteroepitaxial Wurtzite and Zinc-blende Structure GaN Grown by Reactive-ion Molecular-beam Epitaxy: Growth Kinetics, Microstructure, and Properties," J. Appl. Phys., 73(1), 189 (1993).
27. Preschilla, N. A., Elkashef, N. M., Srinivasa, R. S. and Major, S., "Growth of GaN Films by Reactive Sputtering of GaAs," Surface and Coatings Technology, 108, 328 (1998).
28. Sitar, Z., Smith, L. L. and Davis, R. F., "Interface Chemistry and Surface Morphology in the Initial Stages of Growth of GaN and AlN on α-SiC and Sapphire," J. Crystal Growth, 141, 11 (1994).
29. Steckl, A. J., Devrajan, J., Tran, C. and Stall, R. A., "Growth and Characterization of GaN Thin Films on SiC SOI Substrates," J. Electron. Mat., 26, 217 (1997).
30. Zhang, X., Kung, P., Walker, D., Saxler, A. and Razeghi, M., "Growth of GaN without Yellow Luminescence," Mat. Res. Soc. Sympn. Proc., 359, 625 (1995).