193-nm photoresists based on norbornene copolymers with derivatives of bile acid

Chemistry Letters

Volumn , Issue 4, 2000, Pages 414-415

  Kim, Jin Baek ^a   Lee, Bum Wook ^a   Yun, Hyo Jin ^a   Kwon, Young Gil ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034341214     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.2000.414     Document Type: Article

References (20)

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14. -1): 3492 (OH), 2942 (alicyclic CH), 1729 (C=O of ester), 1151 (C-O of ester).
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16. -1 at 193 nm. Copolymers having feed ratio less than 7.5 mol% HENC cannot be used for lithographic evaluation due to loss of adhesion to silicon substrate.
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18. Polymerization was carried out in dry toluene using 1.0 mol% of AIBN at 65 °C under vacuum in a sealed ampoule for 20 h.
19. -1): 3488 (OH), 2943 (alicyclic CH), 1730 (C=O of ester), 1154 (C-O of ester).
20. -1 at 193 nm.