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Journal of Materials Research

Volumn 15, Issue 11, 2000, Pages 2387-2392

Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator

(8) Huang, J S a Chen, Chih b Yeh, C C b Tu, K N b Shofner, T L c Drown, J L c Irwin, R B c Vartuli, C B c

a NOKIA RESEARCH CENTER (United States)

b Engineering IV (United States)

c Cirent Semiconductor (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT DENSITY; ELECTRIC CURRENTS; NICKEL; SEMICONDUCTOR DOPING;

CURRENT CROWDING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034333904 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2000.0343 Document Type: Article

Times cited : (5)

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