Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress

Journal of Applied Physics

Volumn 86, Issue 12, 1999, Pages 6895-6901

  Liao, C N ^a,b   Chen, C ^a   Huang, J S ^a,c   Tu, K N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009106342     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371769     Document Type: Article

References (7)

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3. G. N. Morrison, J. M. Kallis, L. A. Strattan, I. R. Jones, and A. L. Lena, "RADC Thermal Guide for Reliability Engineers", Report No. RADC-TR-82-172, Rome Air Development Center, Air ForceSystems Command, Griffith Air Force Base, NY (1982).
4. J. S. Huang, C. N. Liao, K. N. Tu, S. L. Cheng, and L. J. Chen, J. Appl. Phys. 84, 4788 (1998).
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
6. J. S. Huang, Ph.D. dissertation, UCLA, 1997.
7. A. F. Ioffe, Semiconductor Thermoelements, and Thermoelectric Cooling (Infosearch, London, 1957).