Abnormal electrical behavior and phase changes in implanted p+- And n+-Si channels under high current densities

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 4788-4796

  Huang, J S ^a,c   Liao, C N ^a   Tu, K N ^a   Cheng, S L ^b   Chen, L J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000301239     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368802     Document Type: Article

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