Observation of current polarity effect in stressing as-formed sub-micron Al-Si-Cu/TiW/TiSi2 contacts

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1031-1037

  Chen, Li Zen ^a   Hsu, Klaus Y J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; TITANIUM COMPOUNDS;

ELECTROMIGRATION EFFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032631572     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00020-9     Document Type: Article

References (6)

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2. Yamada K., Tomita K., Ohmi T. Formation of metal silicide-silicon contact with ultralow contact resistance by silicon-capping silicidation technique. Appl. Phys. Lett. 64:1994;3449-3451.
3. Loh W.M., Saraswat K., Dutton R.W. Analysis and scaling of Kelvin resistors for extraction of specific contact resistivity. IEEE Electron Device Lett. EDL-6:1985;105-108.
4. Loh W.M., Swirhun S.E., Crabbé E., Saraswat K., Swanson R.M. Accurate method to extract specific contact resisitivity using cross-bridge Kelvin resistors. IEEE Electron Device Lett. EDL-6:1985;441-443.
5. Lin C.C., Chen W.S., Huang H.L., Hsu K.Y.J., Liou H.K., Tu K.N. Reliability study of sub-micron titanium silicide contacts. Appl. Surf. Sci. 92:1996;660-664.
6. 2Si contacts on Si. Phys. Rev. Lett. 76:1996;2346.