Copper contamination effects in 0.5 μm BiCMOS technology

Microelectronic Engineering

Volumn 33, Issue 1-4, 1997, Pages 211-216

  Gravier, T ^a   Braud, F ^a,c   Torres, J ^a   Palleau, J ^a   Chantre, A ^a   Kirtsch, J ^b  

^a ORANGE LABS   (France)

^b STMICROELECTRONICS   (Italy)

^c Matra MHS TEMIC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BIPOLAR INTEGRATED CIRCUITS; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROMIGRATION; IMPURITIES; INTEGRATED CIRCUIT MANUFACTURE; METALLIZING; MICROELECTRONIC PROCESSING; SUBSTRATES; TITANIUM NITRIDE; ULSI CIRCUITS;

CIRCUIT INTERCONNECTIONS; DIFFUSION BARRIERS;

CMOS INTEGRATED CIRCUITS;

EID: 0039384549     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-9317(96)00047-0     Document Type: Article

References (6)

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