Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2167-2178

  Kuhlmann, Burkhard ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON TUNNELING; MIS DEVICES; OPTIMIZATION; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THREE DIMENSIONAL; TWO DIMENSIONAL;

DEVICE PARAMETERS; SEMICONDUCTOR DEVICE MEASUREMENTS; TUNNELING CURRENT;

SILICON SOLAR CELLS;

EID: 0034318388     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877180     Document Type: Article

References (49)

1. J. Shewchun, F. D. King, and M. A. Green, "Surface insulation diode applied to direct energy conversion," Dept. Atomic Energy, Canada, Rep. 5421-8, Dec. 1972.
2. E. J. Charlson, A. B. Shah, and J.C. Lien, "A new silicon Schottky photovoltaic energy converter," in IEDM Tech. Dig., Dec. 1972, p. 15.
3. J. Lindmayer, "Surface inversion solar cell and method of forming same," U.S. Patent 3 769 558, Oct. 1973.
4. W. A. Anderson, A. E. Delahoy, and R. A. Milano, "An 8% efficient layered Schottky-barrier solar cell," J. Appl. Phys., vol. 45, pp. 3913-3917, 1974.
5. R. B. Godfrey and M. A. Green, "High efficiency silicon minMIS solar cells-Design and experimental results," IEEE Trans. Electron Devices, vol. ED-27, pp. 737-745, 1980.
6. R. Hezel and R. Schoerner, "Plasma SiN-A promising dielectric to achieve high quality silicon MIS/IL solar cells," J. Appl. Phys., vol. 52, pp. 3076-3079, 1981.
7. R. Hezel, "Advances in MIS inversion layer solar cells," in Proc. 18th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, Oct. 1985, pp. 180-185.
8. A. Metz, R. Meyer, B. Kuhlmann, M. Grauvogl, and R. Hezel, "18.5% efficient first-generation MIS inversion layer silicon solar cells," in Proc. 26th IEEE Photovoltaic Specialists Conf., Anaheim, CA, Oct. 1997, pp. 31-34.
9. R. Hezel, "A review of recent advances in MIS solar cells," Progr. Photovoltaics, vol. 5, pp. 109-120, 1997.
10. A. G. Aberle et al., "Limiting loss mechanisms in 23% efficient silicon solar cells," J. Appl. Phys., vol. 77, pp. 3491-3504, 1995.
11. P. P. Altermatt, G. Heiser, and M. A. Green, "Numerical quantification and minimization of perimeter losses in high-efficiency silicon solar cells," Progr. Photovoltaics, vol. 4, pp. 355-367, 1996.
12. G. Heiser et al, "Optimization of rear contact geometry of high-efficiency silicon solar cells using three-dimensional numerical modeling," in Proc. 13th EC Photovoltaic Solar Energy Conf., Nice, France, Oct. 1995, pp. 447-450.
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
14. M. A. Green, F. D. King, and J. Shewchun, "Minority carrier MIS tunnel diodes and their application to electron- and photovoltaic energy conversion-I. Theory," Solid-State Electron., vol. 17, pp. 551-561, 1974.
15. J. Shewchun, M. A. Green, andF. D. King, "Minority carrier MIS tunnel diodes and their application to electron and photo-voltaic energy conversion-II. Experiment," Solid-State Electron., vol. 17, pp. 563-572, 1974.
16. L. C. Olsen, "Model calculations for metal-insulator-semiconductor solar cells," Solid-State Electron., vol. 20, pp. 741-751, 1977.
17. N. G. Tarr, D. L. Pulfrey, and D. S. Camporese, "An analytical model for the MIS tunnel junction," IEEE Trans. Electron Devices, vol. ED-30, pp. 1760-1765, 1983.
18. M. Y. Doghish and F. D. Ho, "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices," IEEE Trans. Electron Devices, vol. 39, pp. 2771-2780, 1992.
19. "A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices: A solar cell application," IEEE Trans. Electron Devices, vol. 40, pp. 1446-1454, 1993.
20. C. E. Norman and R. E. Thomas, "Detailed modeling of inversion-layer solar cells," IEEE Trans. Electron Devices, vol. ED-27, pp. 731-737, 1980.
21. W. A. Miller and L. C. Olsen, "Model calculations for silicon inversion layer solar cells," Solar Cells, vol. 8, pp. 371-378, 1983.
22. P. De Visschere, "A two dimensional model of an MIS inversion layer solar cell," in Proc. 14th IEEE Photovoltaic Specialists Conf., San Diego, CA, Jan. 1980, pp. 86-92.
23. "Two-dimensional modeling of the MIS grating solar cell," IEEE Trans. Electron Devices, vol. ED-30, pp. 840-849, 1983.
24. "Two-dimensional collection and injection in grating solar cells," Solar Cells, vol. 17, pp. 363-371, 1986.
25. B. Kuhlmann et al., "Fill factor losses in inversion layer silicon solar cells due to current crowding effects below the MIS contact," in Proc. 14th EC Photovoltaic Solar Energy Conf., Barcelona, Spain, July 1997, pp. 2465-2468.
26. R. Hezel, W. Hoffmann, and K. Jaeger, "Recent advances in silicon inversion layer solar cells and their transfer to industrial pilot production," in Proc. 10th EC Photovoltaic Solar Energy Conf., Lisbon, Portugal, April 1991, pp. 511-514.
27. D. K. Schröder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.
28. A. G. Aberle, J. Schmidt, and R. Brendel, "On the data analysis of lightbiased photoconductance decay measurements," J. Appl. Phys., vol. 79, pp. 1491-1496, 1996.
29. M. Grauvogl, "Herstellung und Charakterisierung von Truncated-Pyramid MISIL-Solarzellen," Ph.D. dissertation (in German), Univ. Hannover, Germany, 1997.
30. B. Kuhlmann et al., "Characterization of 15-16% efficient first-generation metal-insulator-semiconductor inversion-layer silicon solar cells," Institut für Solarenergieforschung Hameln/Emmerthal, Emmerthal, Germany, Internal Rep., Jan. 1997.
31. W. Warta, R. Bergmann, and B. Vo, "Determination of recombination parameters in silicon solar cells using light induced transients," in Proc. 8th EC Photovoltaic Solar Energy Conf., Florence, Italy, May 1988, For details on this method, pp. 1416-1421.
32. B. Kuhlmann et al, "Fabrication and characterization of 662-mV open-circuit voltage high-efficiency inversion-layer silicon solar cells," in Proc. 25th IEEE Photovoltaic Specialists Conf., Washington, DC, May 1996, pp. 493-496.
33. G. Heiser, P. P. Altermatt, and J. Litsios, "Combining 2-D and 3-D device simulation with circuit simulation for optimizing high-efficiency silicon solar cells," in Proc. 6th IEEE Conf. Simulation of Semiconductor Devices and Processes, Erlangen, Germany, Sept. 1995, pp. 348-351.
34. P. P. Altermatt et al., "Spatially resolved analysis and minimization of resistive losses in high-efficiency silicon solar cells," Progr. Photovoltaics, vol. 4, pp. 399-414, 1996.
35. Integrated Syst. Eng. AG, "DESSIS-ISE (4.0),", Zurich, Switzerland, 1996.
36. A. Schenk and G. Heiser, "Modeling and simulation of tunneling through ultra-thin gate dielectrics," J. Appl. Phys., vol. 81, pp. 7900-7907, 1997.
37. A. Schenk, private communication, 1998.
38. B. Kuhlmann, "Characterization and multi-dimensional simulation of MIS inversion layer solar cells," Ph.D. dissertation (in German), Univ. Hannover, Germany, 1998.
39. H. Neuhaus et al., "Determination of the dominant current transport mechanisms through the MIS tunnel diode of MIS inversion-layer silicon solar cells," in Proc. 2nd World Conf. Photovoltaic Energy Conversion, Vienna, Austria, July 1998, pp. 194-197.
40. H. S. Bennett and C. L. Wilson, "Statistical comparison of data on band-gap narrowing in heavily doped silicon," J. Appl. Phys., vol. 55, pp. 3582-3589, 1984.
41. P. P. Altermatt, J. Schmidt, G. Heiser, and A. G. Aberle, "Assessment and parameterization of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon," J. Appl. Phys., vol. 82, pp. 4938-4944, 1997.
42. A. G. Aberle, S. R. Wenham, and M. A. Green, "A new method for accurate measurements of the lumped series resistance of solar cells," in Proc. 23rd IEEE Photovoltaic Specialists Conf., Louisville, KY, May 1993, pp. 133-138.
43. J. E. Mahan and G. M. Smirnov, "A new perspective on distributed series resistance effects in photovoltaic devices," in Proc. 14th IEEE Photovoltaic Specialists Conf., San Diego, CA, Jan. 1980, pp. 612-618.
44. P. Campbell and M. A. Green, "Light trapping properties of pyramidally textured surfaces," J. Appl. Phys., vol. 62, pp. 243-249, 1987.
45. J. Zhao, A. Wang, P. Altermatt, and M. A. Green, "Twenty-four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss, "Appl. Phys. Lett., vol. 66, pp. 3636-3638, 1995.
46. M. A. Green, Silicon Solar Cells-Advanced Principles and Practice. Sydney: Univ. New South Wales, 1995.
47. C. Hampe et al., "Toward 700 mV inversion layer silicon solar cells," in Proc. 14th European Photovoltaic Solar Energy Conf., Barcelona, Spain, July 1997, pp. 1495-1498.
48. M. Grauvogl, A. G. Aberle, and R. Hezel, "17.1% efficient truncatedpyramid inversion-layer silicon solar cells," in Proc. 25th IEEE Photovoltaic Specialists Conf., Washington, DC, May 1996, pp. 433-436.
49. J. Zhao, A. Wang, and M. A. Green, "High efficiency PERL silicon solar ells on FZ, MCZ and CZ substrates," in Tech. Dig. llth Int. Photovoltaic Science and Engineering Conf., Sapporo, Japan, Sept. 1999, pp. 557-558.