Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion-I. Theory

Solid State Electronics

Volumn 17, Issue 6, 1974, Pages 551-561

  Green, M A ^a   King, F D ^a   Shewchun, J ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, TUNNEL;

SEMICONDUCTOR DEVICES, MIS;

EID: 0016069350     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90172-5     Document Type: Article

References (10)

1. The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
2. The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structures
3. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment